Abstract
By evaporating cobalt onto Si(100) substrates in an oxygen ambient, oxygen concentrations of 2, 6 and 16 at.% could be gettered in three cobalt films. Auger depth profiles and Rutherford backscattering spectra were obtained from samples annealed for 20 min at 440, 500, 600 and 700°C. At 440°C silicide formation is slowed down in cobalt films with a higher oxygen content. Silicide formation during 20 min at annealing temperatures higher than about 600°C is not significantly affected by oxygen contents of 2 and 6 at.%. No silicide formation occurred at these annealing temperatures for cobalt films with an oxygen content of 16 at.%. The influence of oxygen on the rate of silicide formation is explained in terms of oxygen segregation according to the Langmuir relation for equilibrium interface concentration.
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