Abstract
In this work, p-type non-stoichiometric Ni1−xO thin films were deposited by oxygen ion beam assisted RF sputtering on glass substrates. The influence of the oxygen flow ratio (0–100%) on the films’ optoelectronic properties was investigated. In our experimental conditions, all the films are crystallized in the cubic NiO phase. However, their crystallinity and mean grain size decreases with increasing oxygen flow ratios. Meanwhile, the films’ conductivity improves from 9.1 to 25.4 S·cm−1. This is due to the fact that the nickel vacancies along with hole carriers can be introduced into NiO films when they are deposited under higher oxygen flow ratio conditions. Thus, the O-rich environment is beneficial in enhancing the films’ carrier concentrations. In addition, with an increasing oxygen flow ratio, the film’s transmittance degrades. The direct optical band gap of Ni1−xO films declines slightly from 3.99 to 3.95 eV, with the oxygen flow ratio increasing from 0% to 100%.
Highlights
Transparent conductive oxides (TCOs) have aroused people’s attention due to their potential applications in the fields of flat panel displays, light emitting diodes, solar cells, smart windows, and photocatalysts [1,2,3,4,5]
The slow development of p-type TCOs has limited the implementation of the transparent p–n junctions, which is of interest for use in photovoltaics and invisible electronic devices
With the oxygen flow ratio rising from 0% to 100%, the oxygen content gradually increases from 69.1 to 70.1 at.%
Summary
Transparent conductive oxides (TCOs) have aroused people’s attention due to their potential applications in the fields of flat panel displays, light emitting diodes, solar cells, smart windows, and photocatalysts [1,2,3,4,5]. They possess a wide band gap, generally greater than 3.0 eV, and so are transparent in the visible light spectrum. The slow development of p-type TCOs has limited the implementation of the transparent p–n junctions, which is of interest for use in photovoltaics and invisible electronic devices
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