Abstract
ABSTRACTSiOx films with oxygen concentrations ranging 13–46 at.% were deposited by plasma enhanced chemical vapor deposition (PECVD) technique using pure SiH4 and N2O mixture. Erbium was then implanted at an energy of 500 KeV with dose of 2×1015 ions/cm2. The samples were subsequently annealed in N2 for 20 sec at temperatures of (300–950°C). Room temperature (RT) photo-luminescence (PL) data were collected by Fourier Transform Infrared Spectroscopy (FTIS) with an argon laser at a wavelength of 514.5 nm and an output power from 5 to 2500 mw. The intense room-temperature luminescence was observed around 1.54 μm. The luminescence intensity increases by 2 orders of magnitude as compared with that of Er-doped Czochralski (CZ) Si. We found that the Er.- luminescence depends strongly on the SiOx microstructure. Our experiment also showed that the silicon grain radius decreased with increasing oxygen content and finally formed micro-crystalline silicon or nano-crystalline silicon. As a result, these silicon small particles could facilitate the energy transfer to Er3+ and thus enhanced the photoluminescence intensity.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
