Abstract
The effect of surface capping on the super- and undersaturation of point defects in Si has been investigated by the diffusion of deep (400 nm) and shallow (200 nm) high concentration profiles of boron grown by molecular beam epitaxy (MBE). Additional information is extracted from the self-diffusion of Ge in the Si-like Si0.50Ge0.50-matrix. The objective is to investigate the injection of vacancies and interstitials from surface or bulk with the aim of obtaining inert diffusion conditions .
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