Abstract
This article investigates the effect of N-type buried layer (NBL) on the holding voltage and failure current of conventional low voltage triggered silicon-controlled rectifier (LVTSCR) and conventional dual directional silicon-controlled rectifier (DDSCR) devices. LVTSCR and DDSCR with N-type buried layer are fabricated on a 0.18- $\mu \text{m}$ Bipolar CMOS DMOS (BCD) technology. In order to verify and predict the effect of N-type buried layer on the characteristics of ESD protection devices, a transmission line pulse (TLP) testing system and a 2-dimension device simulation platform have been used in this work. According to the measurement results, the holding voltage ( ${\mathrm{ V}}_{\mathrm{ h}}$ ) and failure current ( ${\mathrm{ I}}_{\mathrm{ t2}}$ ) of the LVTSCR and DDSCR can be drastically improved by adding N-type buried layer.
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