Abstract
The influence of nonstationary carrier transport on the bandwidth and the bandwidth quantum efficiency product of p-i-n photodiodes is analyzed using the complete phenomenological model for two-valley semiconductors. The analysis has been made for various submicron and micron dimensions, for different bias voltages and for several energies of incident pulse excitation, including the variation of the active area of the p-in photodiode. The analysis shows that, as the thickness of the absorption layer varies, the bandwidth could have more than one maximum, especially for smaller bias voltages. The optimal thickness of the absorption layer versus bias voltage and device area is determined, providing maximal bandwidth and maximal bandwidth-quantum efficiency product.
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