Abstract
The quaternary GaSb1−x−y N y Bi x , epitaxially grown over GaSb substrates, is proposed as a suitable material for optoelectronic devices in the mid-infrared region. Conduction band anti-crossing and valence band anti-crossing models are used to calculate the conduction band and valence band split-off energies and strain in the material as functions of Bi and N contents. Material compositions and band gap are calculated for various strain conditions, such as unstrained, tensile strain and compressive strain. Ratio of nitrogen concentration to Bi concentration for perfect lattice match with GaSb substrate is calculated as 0.14.
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