The influence of microscopic parameters on the ionic conductivity of SrBi 2(Nb 1− xV x) 2O 9− δ(0≤ x≤0.3) ceramics

Abstract

Layered SrBi 2(Nb 1− x V x ) 2O 9− δ (SBVN) ceramics with x lying in the range 0–0.3 (30 mol%) were fabricated by the conventional sintering technique. The microstructural studies confirmed the truncating effect of V 2O 5 on the abnormal platy growth of SBN grains. The electrical conductivity studies were centred in the 573–823 K as the Curie temperature lies in this range. The concentration of mobile charge carriers ( n), the diffusion constant ( D 0) and the mean free path ( a) were calculated by using Rice and Roth formalism. The conductivity parameters such as ion-hopping rate ( ω p) and the charge carrier concentration ( K′) term have been calculated using Almond and West formalism. The aforementioned microscopic parameters were found to be V 2O 5 content dependent on SrBi 2(Nb 1− x V x ) 2O 9− δ ceramics.