Abstract
Using the planar structures "Ni layer - chalcogenide amorphous film - Ni layer" and "graphite probe - chalcogenide amorphous film graphite probe" samples, the influence of mercury vapor on the electrical resistance of amorphous films of the Se-Te, Se-Sb and Se-As systems was investigated. It was established that exposure of samples in mercury vapor leads to a decrease in their electrical resistance by 4-7 orders of magnitude. As the temperature and mercury concentration increase, the transition time from a high-resistance state to a low-resistance state decreases. When introducing Te, Sb, and As into amorphous selenium and increasing their concentration in the composition of the films, the transition time increases, and the value of the change in resistance decreases. It was established that the change in resistance is mainly determined by the change in surface conductivity of chalcogenide films. A decrease in the electrical resistance of selenium-containing amorphous films modified with mercury is caused by the formation of HgSe crystalline inclusions in their matrix.
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