Abstract
The influence of mechanical and electrical interfacial conditions on the threshold field of ferroelectric nanothin films has been studied by employing Ginzburg–Landau theory and the phase field method. The results obtained show that the threshold field of the ferroelectric thin film increased with increasing compressive misfit strain and extrapolation length. This was because the said factors increased the energy barrier for domain wall motion by affecting the elastic and depolarization fields in the film. These results are useful for the manufacture and application of micro-electromechanical-systems including ferroelectric thin films.
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