Abstract
We performed a numerical study to observe the influence of the Marangoni convection and external temperature gradient on the temperature and oxygen impurities fluctuations near the solid liquid interface. For this purpose, a 3D numerical model, using the STHAMAS3D software, has been developed for a Cz configuration for 200mm silicon crystals growth. We analyzed the temperature and oxygen impurities fluctuations in a monitor point situated below the solidification interface in two cases: with and without Marangoni convection taken into consideration. Also, we studied the influence of three profiles of the external temperature gradient on the temperature and oxygen fluctuations. Both studies revealed that there is a small dependence of the temperature distribution in the melt near the interface both on the Marangoni convection and on the temperature gradient. The O concentration is more uniformly distributed in the melt if the effects of the Marangoni convection are present and it has a higher value if a smaller external temperature gradient is used.
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