Abstract
The paper reports on theoretical and experimental studies of the threshold current density and differential quantum efficiency dependencies on output losses for AlGaAs/GaAs and InGaAsP/GaAs SQW SCH laser diodes. A theoretical model is proposed to calculate the effect of waveguide recombination and leakage to the cladding on the threshold current and differential quantum efficiency of SQW SCH lasers. It is shown that the model assuming quasineutrality and continuity of quasi Fermi levels at interfaces gives a correct description of the process of carrier recombination in the waveguide layers of the lasers in question. Carrier leakage from the active region should be the main cause of increase of the threshold current density in the SQW lasers for densities in excess of ∼3 kA/cm2. It has been established that the carrier concentration in the waveguide increases above the lasing threshold as well, which can result in enhanced leakage into the claddings with increasing current density and to an anomalous decr...
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