Abstract
The ability of a cw-pumped Nd : YAG laser to anneal process-induced slip damage in silicon is demonstrated via x-ray topography as well as Sirtl etching. Severely dislocated regions of a silicon wafer were scanned by the laser at various power levels. X-ray topographs of the regions indicate that 55–110 J/cm2 can anneal even severely damaged material. Further, the depth of the anneal is estimated to be between 10 and 25 μ.
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