Abstract
The influence of implantation of krypton ions and the combined implantation of bismuth and krypton ions into manganin pressure sensors on their sensitivity to pressure and temperature has been investigated. Manganin pressure sensors were of the foil type, 10 μm thick, and of relatively large planar dimensions. Implanted dose of Kr was 2.5×1015 ion/cm2 with the energy of 245 MeV/ion. In the case of combined implantation, it was as high as 1016 ion/cm2 with the energy of ∼255 keV/ion for Bi ions and 1017 ion/cm2 with the energy of ∼255 keV/ion for Kr ions. Implantation of high-energy Kr ions makes the pressure sensitivity increase only ∼1%, but for the complex Kr–Bi implantation, the increase of pressure sensitivity by 25% has been observed. Modelling of the resistance properties of the sensor, representing it as a parallel connection of strongly implanted and almost not implanted parts, allowed us to estimate the increase in the pressure sensitivity of the strongly implanted part as being much higher (∼250%). High-dose implantation with Kr and Bi ions remarkably changes the temperature-resistance characteristic of manganin sensor, making it more convenient for the use in the vicinity of room temperature. The surface structure of the manganin foil after high-energy Kr ions implantation has smaller roughness.
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