Abstract
A photothermal technique with interferometrical detection was applied to obtain amplitude and phase images of ion-implanted and proton-irradiated semiconductors. It was experimentally shown that ion implantation and radiation defects differently affect on the photothermal images of semiconductors by using weakly absorped laser radiation for heating. Oscillations observed by photothermal imaging was explained by interference of the heating light due to internal reflection and should be taken into account for right interpretation of the images.
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