Abstract
The influence of a surface inversion layer in MIS structures with a tunnel-thin insulator of such characteristics as the height of the potential barrier and the width of the space charge region, is theoretically studied using the approximation of a constant field divergence (constant space charge density). The relation is found between the inversion layer length and the surface state density at the insulator-semiconductor interface, the diffusion potential difference, and the total width of the space charge layer. A general equation for the diffusion potential difference is derived by using the expressions for surface and space charge densities, including those for their values at the insulator-semiconductor interface. It is shown that in the case of a tunnel-thin insulator the potential barrier height linearly rises with increasing inversion layer thickness. It is alsoshown that the presence of an inversion layer near the semiconductor surface may noticeably contribute to the open-circuit photovoltage across a Schottky MTIS solar photocell; estimations give values reaching about 0.4V for this contribution and about 1 eV for the barrier height. [Russian Text Ignored].
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
