The influence of insulator properties on the electro-optical performance of flexible ZnS:ErF3 alternating current thin film electroluminescent devices

Abstract

We have developed flexible ZnS:ErF3 alternating current thin film electroluminescent devices on molybdenum foils, and quantified the effect of insulator properties for the case of alumina (Al2O3) and barium tantalate (BaTa2O6) on the device electrical characteristics, and infrared emission. The inverted, full-stack structures could be flexed in tension and compression without mechanical failure or deterioration of optical output, and flex radii of a few centimeters are routinely achieved. Thus, the feasibility of a flexible, inorganic, large area electroluminescent emitter has been demonstrated. Compared to the Al2O3 devices, the numbers for structures employing BaTa2O6 represent a 29% increase in flux density at 980 nm, a 36% increase at 1540 nm, an 18% increase in conduction charge, a 10% increase in phosphor field and a 14% increase in threshold voltage. Our interpretation of the data is as follows: in the case of BaTa2O6, the interface states from which electrons are sourced into the phosphor are deeper, requiring a higher voltage for field emission. As a consequence, electrons are injected into the phosphor when the phosphor field is higher, resulting in better excitation efficiency and improved optical generation. The increase in conduction charge is interpreted as a higher density of interface states, which appear to have a narrower energy distribution based on the more abrupt threshold behavior observed.