Abstract
Large areas of high quality, single crystal CdTe are desirable as substrates for the subsequent growth of Hg1-xCdxTe for infrared applications. However, bulk crystal growth of CdTe invariably results in microtwins as well as other lattice defects such as boundaries, dislocations, and Te precipitates. Molecular beam epitaxial growth (MBE) of heteroepitaxial CdTe on lattice matched substrates of InSb (|∆a|/a≲5x10-4 at 25°C) has resulted in films of good quality as determined by X-ray techniques. This study reports on a TEM characterization employing cross-sectional techniques of MBE grown heteroepitaxial CdTe on InSb (001) substrates. CdTe films of high structural perfection can be prepared, but this perfection depends critically on substrate surface quality and, therefore, substrate cleaning procedures.
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