The Influence of High Isostatic Pressure on Critical Current Density in C-Doped MgB2 Wires

Abstract

This article reports the influence of isostatic pressure (from 0.1 MPa to 1.1 GPa), low annealing temperature of 570 ∘C, and annealing time for the formation of high-field pinning centers in 2% C-doped MgB2 wires. Measurements indicate that 1.1 GPa pressure significantly increases the density of high-field pinning centers below 20 K. However, lower pressure (0.6 GPa) slightly increases the density of high-field pinning centers. Increasing the annealing time from 120 to 210 min leads to a reduction of critical temperature (Tc), irreversibility field (Birr), critical current density (Jc), and upper critical field (Bc2), suggesting that a long annealing time leads to a reduction of high-field pinning center density and the number of connections between superconducting grains. The high pressures and low annealing temperature lead to a high critical current density of 1000 A/mm2 in 7.2 T and 100 A/mm2 in 12.5 T at 4.2 K in MgB2 wires.