Abstract
The influence of HfO 2 thickness (1.6 to 3nm) on interface state density and low field mobility in HfO 2/TiN gate n channel MOSFETs have been studied by analyzing experimental data from charge pumping, split CV, DC I d- V g, pulsed I d- V g and Y-function methods. It is found that there is no HfO 2 thickness dependence on the interface state density, whereas there is continuous electron mobility degradation with HfO 2 thickness. The devices exhibited no detectable fast transient charge trapping, allowing the relative contributions of phonon and Coulomb scattering to be examined over temperature. The dependence of the low field mobility on temperature from 50 K to 400 K indicates HfO 2 remote phonon scattering as the dominant cause of the mobility degradation.
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