Abstract
To meet the demands for sub-20 nm feature devices in the semiconductor industry, minimizing the line width roughness (LWR) is a critical concern for ultra-large scale integrated circuit manufacturing. Post-lithography treatments should reduce the LWR by at least 50% to meet the technology requirements, but the available post-lithography strategies come short. To support the delayed progress, an in depth understanding of the interaction of such post-lithography treatments with EUV-specific resist functionalities is required. In this article, we analyze the change in line widths and LWR's for 30–35 nm lines using EUV photoresists. In addition we study the effect of the chemical composition on the reduction of LWR after hydrogen plasma treatment using “artificially” prepared reference resists. We highlight the effect of the fluorine unit, ester functionalities and photo acid generator/quencher loading on the LWR improvement and H2 plasma induced reflow.
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