Abstract
An alternative approach of adjusting the Ge content in μc-SiGe:H films is explored by changing the H 2/Ar flow rate ratio. The results reveal that the Ge content and film deposition rate both decrease with the increasing flow rate ratio of H 2/Ar. Optical constants of the films are obtained by simulating the optical transmission spectrum using a modified envelope method. The dark conductivity and activation energy are investigated by measuring the temperature-dependent conductivity. The dependence of Ge content, deposition rate and optoelectronic properties on flow rate ratio of H 2/Ar is discussed.
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