Abstract
The influence of gold at the silicon/silicon dioxide interface has been studied using the threshold voltage shift from 300 K to 80 K as a function of diffusion time measurements. It has been found that gold as a positive ion does not penetrate the oxide, but precipitates, with simultaneous decrease in negatively charged gold centers. at the silicon/silicon dioxide interface. when gold is diffused in from the back of an MOS device for long diffusion times. Finally, a theoretical model for the effect of gold on threshold voltage is built up, suggesting two bloeks of gold acceptor states: one close to the valence band edge and the other near to the conduction band edge.
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