The influence of Fe doping on the surface topography of GaN epitaxial material**Project supported by the Knowledge Innovation Engineering of the Chinese Academy of Sciences (No. YYY-0701-02), the National Natural Science Foundation of China (Nos. 61204017, 61334002), the State Key Development Program for Basic Research of China, and the National Science and Technology Major Project.

Abstract

Fe doping is an effective method to obtain high resistivity GaN epitaxial material. But in some cases, Fe doping could result in serious deterioration of the GaN material surface topography, which will affect the electrical properties of two dimensional electron gas (2DEG) in HEMT device. In this paper, the influence of Fe doping on the surface topography of GaN epitaxial material is studied. The results of experiments indicate that the surface topography of Fe-doped GaN epitaxial material can be effectively improved and the resistivity could be increased after increasing the growth rate of GaN materials. The GaN material with good surface topography can be manufactured when the Fe doping concentration is 9 × 1019 cm−3. High resistivity GaN epitaxial material which is 1 × 109 Ω·cm is achieved.