Abstract
A theory is constructed of the temperature dependence of quantum oscillation phenomena in narrow-gap electronic semiconductors, taking into account the thermal smearing of Landau levels. Oscillations of longitudinal electrical conductivity in narrow-gap electronic semiconductors at various temperatures are studied. An integral expression is obtained for the longitudinal conductivity in narrow-gap electronic semiconductors, taking into account the diffuse broadening of the Landau levels. A formula is obtained for the dependence of the oscillations of longitudinal electrical conductivity on the band gap of narrow-gap semiconductors. The calculation results are compared with experimental data.
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