Abstract
A theory of the photo-induced electromotive force in extrinsic semiconductors accountingfor the energy bands bending is developed. The non-equilibrium space charge layer and theboundary conditions in the real metal–semiconductor junction have been taken intoaccount. It is shown that photo-induced electromotive force in an n-type semiconductor atany photo-excitation volume essentially depends on the surface potential for certain surfaceparameters.
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Schedule a callMore From: Journal of physics. Condensed matter : an Institute of Physics journal
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