The Influence of Elevated Brain Temperature on Intracranial Pressure during Exposure of RF Energy

Abstract

Brain temperature (BT) and intracranial pressure (ICP) are crucial parameters in precise management of brain rejuvenation in the event of brain injury. In order to reduce medical costs and improve therapeutic effects, it is important to know that the dynamics of BT and ICP are affected due to various reasons. RF energy is also one of the major reason to increase the BT and ICP. In this work, a simple compartment based simulation model has been developed for coupling between RF energy and ICP, with an intention to improve the comprehension of ICP. The model incorporates the cardiovascular output, hemodynamic of cerebral arterial-arteriolar bed, oxygen, and carbon dioxide exchange mechanism between brain tissue and capillary, a non-linear pressure-volume relationship of subarachnoid space. It simulates the interaction between BT, the cerebral metabolic rate of oxygen (CMRO2), a concentration of bicarbonate ions (HCO3-), cerebral blood flow (CBF), cerebral blood volume (CBV) and ICP. The basic concept behind the model is the expansion or contraction of brain tissue which is affected underexposure of RF energy. The simulation results determine the following: 1) ICP becomes unstable underexposure of RF energy at higher specific absorption rate (SAR). 2) ICP and brain temperature has a direct relation during exposure of RF energy. The model elaborates the dynamics of ICP with less complexity.