Abstract

Light emitting diodes (LEDs) is an important solid-state light source, which has the advantage of long lifetime and low cost. As a semiconductor photoelectric device, the electron-beam irradiation on LEDs brings the deep level defect acting as the compensation of the chemical doping in LEDs. In this paper the influence of low-energy and low-dose electron-beam irradiation on the GaN-based LEDs has been studied. It is observed that the light intensity of irradiated LEDs emitting increases, and the electronic parameters are mainly unchanged. And the electron beam irradiation mechanism of the experiment results are discussed and analyzed.

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