Abstract
Abstract A one-dimensional mathematical model of a photoelectrochemical cell is developed which accounts explicitly for the transport, generation, and recombination of electrons and holes in the semiconductor, the coupling among interfacial reactions, and transport of electrolytic species by diffusion, migration, and convection. This model is used to show the degree of coupling expected between processes taking place in the semiconductor and in the electrolyte. The influence of electrolytic mass-transfer was evaluated for an n-type GaAs semiconductor in contact with a 0.80 M K2Se2, 0.10 M K2Se2, 1.0 M KOH electrolyte. Calculated current-potential curves were shown to be relatively unaffected by limitations to electrolytic mass transfer, even at large fractions of the limiting current. The magnitude of charge held within the electrolytic double layer and the space-charge region of the semi-conductor is relatively invariant for currents significantly below the limiting current, but increases as the mass-tra...
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