Abstract
Abstract We have investigated the influence of the shape of the r.f. electrode and the influence of hydrogen dilution of SiH4 on the optical properties of glow-discharge hydrogenated amorphous silicon, deposited at 100 and 250°C. Three r.f. electrodes were used one ring-shaped electrode and two circular flat-plate electrodes with different diameters. We conclude that by using the largest electrode, material with the lowest band-gap (E0 = 1·61 ev) is obtained. Fourier-transform infrared spectroscopy measurements suggest that the decrease of E0 with electrode size is not caused by a decrease in the total hydrogen content, but by a redistribution of H from clustered Si-H bonds at the surface of internal voids to isolated Si-H bonds. We suppose that this is due to a reduction in the void fraction. When we dilute SiH4 with H2 we find a pronounced decrease in the amount of SiH2 polymers, an increase of the refractive index and a decrease of the optical bandgap. This is also interpreted as being caused by a redu...
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