Abstract
Polycrystalline film of ZnTe/ZnTe:Cu is fabricated by co-vaporization. The influence of evaporation temperature on the structue of the film and Cu distribution in the film and performance of the cell fabricated with the films are studied by XRD,XPS, C-V and I-V analysis. The results indicate that, （1） the deposition temeperature has less effecton the structure of the film ZnTe/ZnTe:Cu, （2） the fact that the Cu concentration in the film deposited at 100℃ raises to a maximum and descend rapidly shows the function of ZnTe film in preventing Cu atoms diffusing in the film and the CdTe cell fabricated with the film shows a wider barrier （XD）,smaller capacitance, better diode characteristic and larger conversion efficiency.
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