Abstract
A metal–semiconductor–metal ultraviolet photodetector has been fabricated with a radiofrequency (RF)-sputtered InGaO thin film. Results for the devices fabricated under different oxygen partial pressure are here in discussed. Under low oxygen partial pressure, the devices work in the photoconductive mode because of the large number of subgap states. Therefore, the devices exhibit internal gain. These defects in the films result in slow switching times and lower photo/dark current ratios. A higher flow ratio of oxygen during the sputtering process can effectively restrain the oxygen vacancies in the film. The responsivity of the photodetector fabricated under an oxygen flow ratio of 20% can reach 0.31 A/W. The rise time and decay time can reach 21 s and 27 s, respectively.
Highlights
Ultraviolet (UV) photodetectors have drawn increasing attention owing to their multiple applications, such as chemical analysis, water purification, flame detection, and secure communications [1,2,3]
We can broaden the bandgap of In2 O3 by doping with Ga2 O3 [10], which is usually used in solar-blind photodetectors [11,12] and has a wide bandgap energy of approximately
The peaks (222), (440), (400), and (622) observed in IGO film fabricated under 20% oxygen partial pressure are consistent with the and (622) observed in IGO film fabricated under 20% oxygen partial pressure are consistent with the phase of In2O3
Summary
Ultraviolet (UV) photodetectors have drawn increasing attention owing to their multiple applications, such as chemical analysis, water purification, flame detection, and secure communications [1,2,3]. Visible-blind sensors can be used for studying the ozone layer where UV radiation is intense. Wide bandgap semiconductors such as ZnO, GaN, and TiO2 have been commonly investigated owing to their promising advantages such as high sensitivity at room temperature [4,5,6,7,8,9]. Indium–gallium–oxide (IGO) is not commonly reported in the literature. The bandgap of In2 O3 is approximately 2.9 eV, approaching the visible-blind region. We can broaden the bandgap of In2 O3 by doping with Ga2 O3 [10], which is usually used in solar-blind photodetectors [11,12] and has a wide bandgap energy of approximately
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