Abstract
The structure, hydrogen content and bonding configurations of nanocrystalline silicon films produced by PECVD using hydrogen-diluted silane have been investigated by Raman and IR-spectroscopies. The film structure has been studied in relation to deposition parameters, such as gas dilution ratio, amount of water vapor in the initial gas, substrate temperature ( T s) and the substrate material. An analysis of Raman spectra has revealed in the films nanocrystallites embedded in amorphous matrix. The crystallite size ( L) is in the range 3.6–5.7 nm. The volume fraction of crystallises ( X c) varies between 15% and 81%, depending on preparation conditions. Both L and X c are primarily influenced by the presence of water vapor in the initial gas and the substrate material, while the effect of T s is less pronounced. IR data show the presence of bound hydrogen with a total concentration varying between 3 and 13 at.%.
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