Abstract
Cavities, formed in Si by hydrogen implantation and subsequent annealing, can provide strong sinks for metal interstitials and are ideal gettering sites for metal impurities. This letter reports the effect of cavities on the transient enhanced diffusion (TED) of boron. Boron implantation was carried out into wafers containing pre-formed cavities and TED of boron was suppressed during subsequent annealing. In some cases, the boron was introduced into an amorphous layer and the presence of cavities was also observed to reduce the amount of the transient enhanced diffusion occurring.
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