Abstract
AbstractWe have observed transient enhanced diffusion (TED) in silicon substrates with boron doping superlattices and varying background carbon concentrations after ion implantation with silicon ions followed by low‐temperature annealing. Our results clarify the effects of low‐level carbon concentrations on this process. In addition, we have found that the effective diffusion coefficient of self‐interstitial Si atoms is inversely proportional to the square of the substrate carbon concentration. We also discovered that the carbon atoms segregate out in the ion‐implantation damage regions, forming boron–carbon clusters. © 2002 Scripta Technica, Electron Comm Jpn Pt 2, 85(2): 54–60, 2002
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