Abstract
The preparation of a-SiOCF films from Si(OC2H5)4, C4F8 and/or Arusing a plasma-enhanced chemical vapour deposition method is reported. Thechemical bonding structures of the films are analysed by high-resolution x-rayphotoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR)spectroscopy. The results show that the films contain F-Si-O-Si, Si-OH,Si-O-Si, C-CF and C-F configurations. However, as for the film deposited fromthe feeding gases with Ar, a C-C configuration is also included in addition tothe above-mentioned configurations. This indicates that the existence of Ar inthe plasma leads to the formation of a fluorocarbon structure with a high degree ofcross-linking. No evidence reveals the presence of a Si-C bond in thefilm, so it is believed that the fluorocarbon is perhaps embedded into thematrix of SiOF.
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