The influence of antimony doping on I–V, C–V-f and (G/w)-V-f characteristics of indium/ SbXW1-XSe2 (X=0, 0.1, 0.5) alloy Schottky diodes

Abstract

Transition Metal Dichalcogenides (TMDCs) are well known for their distinctive device applications. Their properties can be modulated by doping/alloying suitable elements. Electrical properties of SbXW1-XSe2 (X = 0, 0.1, 0.5) ternary alloys are reported. Pristine WSe2 transforms from p-type to n-type with increasing content of antimony. In this article, Schottky diode application of SbXW1-XSe2 (X = 0, 0.1, 0.5) ternary alloys has been studied and parameters are collated with respect to doping concentration. Flat and shiny crystals of each doping concentration were chosen as a substrate to deposit indium metal thin film using a physical vapour deposition technique for fabricating Schottky diodes. Rectification of fabricated Indium/SbXW1-XSe2 (X = 0, 0.1, 0.5) ternary alloy Schottky diodes was studied using I–V characteristics at room temperature. The diode parameters including rectification ratio, Ideality factor (n), saturation current (I0) and Series resistance (Rs) have been determined and compared for different doping concentrations. C–V-f and (G/w)-V-f characteristics were also studied in the frequency range 20 kHz to 1 MHz at sweep bias voltage −0.9 to 0.9 V at room temperature. Frequency dependent series resistance (Rs) and density distribution of the interface states (Nss) were obtained from measured capacitance (Cm) and conductance (Gm/w) in strong accumulation region. All the measured parameters confirm strong influence of doping on electrical properties of Schottky junction.