Abstract

The influence of anodization time with the electrochemical cell design on the fabrication process of porous silicon (PS) nanostructures based on two electrochemical anodization cells (designed single tank cell and double tank cell) with two anodization times (10 and 30 minutes) was studied. Atomic force Microscopy (AFM) characterization had revealed three types of pores, mesopores, mesopore fill of mesopores, and macropore fill of mesopores were obtained from designed single tank cell with (10 and 30 minutes) of anodization time, whilst for double tank cell has not revealed precise information about the size and type of pores. Pores formation have been further approved by current-voltage (I-V) measurement and photoluminescence emission by ultraviolet-lamp (254-366) nm for both electrochemical cells.

Highlights

  • Porous silicon (PS) is prepared by electrochemical anodization of silicon wafers in electrolyte solution which consists of hydrofluoric acid (HF) and ethanol by providing the silicon wafers with the required current for a specific period of time [1]

  • Pore size and morphology of porous silicon samples were analyzed by employing Section Analysis of Atomic Force Microscopy image [8, 9]

  • The influence of the anodization time on the fabrication process of porous silicon nanostructures has been studied based on two anodization times (10 and 30) min. with two electrochemical cells

Read more

Summary

Introduction

Porous silicon (PS) is prepared by electrochemical anodization of silicon wafers in electrolyte solution which consists of hydrofluoric acid (HF) and ethanol by providing the silicon wafers with the required current for a specific period of time [1]. Anodization parameters which are crucial in determine pore morphology and pore size are current density, electrolyte composition, silicon wafer type and doping concentration [4]. The influence of andoization time on the fabrication process of porous silicon (PS) nanostructures with respect to the electrochemical cell design has been studied. This study included two anodization times 10 and 30 minutes with two electrochemical cells design (designed single tank cell and double tank cell). The Atomic force Microscopy (AFM) was utilized to study the morphological features of the porous silicon layers depending on manually analyzing the profile section analysis, Keithley semiconductor characterization system model 4200-scs was used to measure current-voltage characteristics, the photoluminescence emission of PS was tested by ultraviolet - lamp at (254-366) nm wavelength

Experimental part
RESULTS AND DISCUSSION
Ultraviolet Photoluminescence Emission of PS Layer
Current – Voltage characteristics
Conclusion
Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.