Abstract
Silicon carbide crystals grow in various crystal structures and modifications, the most prevalent being the cubic zinc blende or beta form and the 6H hexagonal alpha polytype. Much research has been performed on the nature of polytypism [1–3] and the transformation of one polytype to another [4–6, 8]. In this paper results are given of experiments performed to determine if the crystal structure of β-silicon carbide films deposited on α substrates could be improved by thermal annealing and if this polytype was stable in the temperature range where the 2H to 3C to 6H silicon carbide transformation occurs. Electron diffraction studies were used to observe structural changes and polytype transformations in the β-silicon carbide films.
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