Abstract
Acoustic-excitant interaction of GaAsP light emitting diodes (initial and irradiated by 2 MeV electrons) was studied. Structure based on GaAs1-хPх solid solutions, grown by epitaxy from the vapor phase, were the object of the research. It was observed that ultrasonic treatment (UST) results in the drop of the emitting intensity of structures, which relaxes to the previous values after ultrasound termination. The possible reason of observed changes concerning nonequilibrium dislocation clusters were discussed. Electron irradiation leads to the exponential drop of emitting intensity, which restores after UST much slower than initial one. Radiation degradation parameters τ0/Kτ of yellow and orange LEDs were found.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
