Abstract
Abstract In the framework of electron-deformation model, the influence of deformation on the energy spectrum of electrons and holes in InAs/GaAs heterostructure with InAs quantum dots (QD) is investigated. The influence of acousto-electronic effects on the modulation of radiation energy at the recombination transition between the ground states of electron and hole in InAs/GaAs heterostructure with InAs quantum dots is investigated. The nature of the amplitude dependence of the modulation of the recombination radiation energy on the QD size and the amplitude of the mechanical stress created by the acoustic wave on the surface of the matrix is established.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
