Abstract
The crystal growths of Si (110) rough interface have been simulated by molecular dynamics. The morphology transformations of crystal–melt interface influenced by different kinds of dislocations have been investigated. The results showed that the threading dislocation locally changed the morphology of Si (110) interface and then affected the crystal growth rate. A screw threading dislocation induced a type of “V” groove around its outcrop in the Si (110) interface, while an edge threading dislocation formed a triangle cone pit. The influence radius and strain energy of a screw dislocation are bigger than those of an edge dislocation. The growth rate of Si crystal with a screw dislocation is markedly lower than that of an edge dislocation, which is close to that of dislocation-free crystal.
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