Abstract
The paper presents data on electrical resistivity recovery in the Fe-13.4Cr and Fe13.6Cr-1.9Si alloys during isochronal annealing after 5 MeV electron irradiation below 77 K. Long-range migration of radiation-induced defects starts slightly above 200 K in Fe-13.4Cr. The silicon addition in Fe13.6Cr-1.9Si leads to immobilization of Frenkel pair defects thus making the peaks of the stages of the onset of long-range migration shift towards high temperatures up to 370 K and 420 K for self-interstitial atoms and vacancies, respectively. This finding confirms the data obtained earlier for Fe16Cr-Si alloys by means of positron annihilation technique (JNM 508(2018) 100–106) on trapping of radiation-induced defects on Si agglomerates (clusters consisting of several silicon atoms) formed during defect migration.
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