Abstract
The response of the electronic devices subjected to the Electromagnetic Pulse (EMP) effect is a complex problem. The damage to the electronic device due to the EMP is one of the main failure mechanisms in the modern semiconductor electronic systems. The study of the induced physical effects on the semiconductor electronics in this particular aspect of damage is applicable not only to EMP problems but is also applicable when the high transient voltages appear in the circuits whether the pulse origin is EMP, or a transient transform within the system itself, which we will also address briefly.
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