Abstract

The reasons for increasing the charge carriers concentration in thin bismuth films are discussed. The concentration was calculated on the basis of the measured electrical and galvanomagnetic coefficients at the temperature 77 K under the two-band approximation and the assumption that the charge carriers free path in the plane of the film is isotropic. Keywords: Bismuth, thin film, charge carriers concentration, surface.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.