Abstract
To investigate the incorporation of Cr into LEC GaAs, we have grown nine Cr-doped GaAs crystals where the dopant is labelled with radio-tracer 51Cr. A thermodynamic model is developed to describe the segregation behaviour in which the distribution coefficient of the Cr is a function of the arsenic activity in the melt. The analysis shows that either the congruent melt is ~ 2% richer in Ga than the stoichiometric composition or, much more probably, that a significant amount of Ga is lost into the B 2O 3 encapsulant. The latter postulate is shown to be consistent with recent studies by Emori et al. [Japan. J. Appl. Phys. 24 (1985) L291].
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