The impurity states in InGaAsP/InP coaxial double quantum well wires with the effects of electric and magnetic fields

Abstract

The hydrogen donor impurity states are calculated in [Formula: see text] coaxial double quantum well wires by the plane wave method under the theoretical framework of effective mass envelope function approximation. The binding energies of impurity in [Formula: see text] state and [Formula: see text] state are obtained as the functions of impurity position, distance between the inner and outer quantum wires, magnetic and electric field strengths. Transition energies are calculated as the functions of impurity position, distance between the inner and outer quantum wires. The effects of quantum wire thickness and distance of quantum wires on impurity states are analyzed in detail. It is found that the effects of electric field and magnetic field on binding energy of [Formula: see text] state are different for impurity located at different positions.