Abstract
We report on the fabrication of rectifying junctions between n-type ZnO nanorods (NRs) and p-type polymer (poly(3,4ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The ZnO NRs are synthesized by a low temperature two-step hydrothermal method on n-type silicon substrate. Scanning electron microscopy (SEM), photoluminescence (PL) spectroscopy and current–voltage (I–V) measurements are employed to study the morphology, charge transport, and device performance of the fabricated structures. Vertically aligned ZnO NRs are covered with a thick polymer layer to form an heterojunction based photodiode. Graphite and GaIn eutectic (e-GaIn) are used as ohmic contacts to PEDOT:PPS film and Si substrate, respectively. Basic electrical parameters for e-GaIn/Si/ZnO/PEDOT:PSS/Graphite structure are calculated from the I–V characteristics. These structures also show high sensitivity to UV light illumination with a large degree of reproducibility. Furthermore, we demonstrate that by using the photovoltaic effect, the photodetector can operate as self-powered without consuming external energy.
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