Abstract
Chemical-reduced graphene oxide (rGO) films were deposited on titanium (Ti)-coated silicon substrates by a simple electrophoretic deposition. The rGO films were annealed under argon atmosphere at different temperatures. The morphology and microstructure of the rGO films before and after annealing were characterized using scanning electron microscope, X-ray diffraction and Raman spectroscope. The field emission behaviors from these rGO films were investigated. The results show that, Ti-based transition layer can improve the stability of field emission from the rGO film, and the annealing at appropriate temperature is in favor of the field emission. Particularly, the rGO film displays an unexpected vacuum breakdown phenomenon at a relatively high current density. In addition, it is found that the field emission property of the rGO film is dependent on anode-sample distance and the film exhibits lower turn on field at larger anode-sample distance.
Highlights
Graphene, a two dimensional monoatomic thick building block of a carbon allotrope, has grabbed appreciable attention due to its exceptional electronic and optoelectronic properties.[1]
It has been demonstrated that graphene is an ideal material for field emission, which shows promising electron-emission properties, such as low turn-on electrical field, large emission current density and good emission stability
After electrophoretic deposition (EPD), there is no difference in surface morphology between the reduction of graphene oxide (rGO)/Ti/Si and rGO/Si films (FESEM images for rGO/Si film not shown here)
Summary
A two dimensional monoatomic thick building block of a carbon allotrope, has grabbed appreciable attention due to its exceptional electronic and optoelectronic properties.[1] Up to now, various techniques have been developed to synthesize graphene nanosheets (GNSs), such as chemical reduction of graphene oxide (rGO),[2] chemical vapor deposition,[3] epitaxial growth on silicon carbide,[4] arc-discharge method,[5] and so on. Many emitter materials show unstable emission current, especially under high electric field for a long time. The influence of Ti transition layer and annealing temperature on field emission properties of rGO films, especially on emission stability, was investigated in detail. During the aging test, a phenomenon of vacuum breakdown at high current level was observed for annealed rGO/Ti/Si sample. The influence of anode-sample distance on field emission performance of annealed rGO/Ti/Si film was studied as well
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
