The Improvement of Position‐Sensitive Photodiode Performance by Phosphorus Ion Implantation Gettering Technique

Abstract

The improvement of position‐sensitive photodiode (PSPD) performance by phosphorus ion implantation gettering technique has been studied. The dark current of junction‐type and nonlinearity of resistor‐type large area PSPDs are significantly reduced, These improvements are attributed to the reduction, in the device active region, of impurities and crystal structural defects which are gettered to the back side of the wafer. The most effectively gettered impurity atom is copper, which is identified by inductively coupled plasma atomic emission spectrometer (ICPAES).